M391B5273CH0-YH9 - Samsung 4GB DDR3-1333 UNBUFFERED ECC

Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

 

Specification:

 

Power
Memory voltage	1.35,1.5 V
Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	PC/server
Memory form factor	UDIMM
Memory voltage	1.35,1.5 V
Module configuration	256M x 8
Memory ranking	2
Memory clock speed	1333 MHz
Internal memory type	DDR3
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	PC/server
Memory form factor	UDIMM
Memory voltage	1.35,1.5 V
Module configuration	256M x 8
Memory ranking	2
Memory clock speed	1333 MHz
Internal memory type	DDR3