M393A4G43AB3-CWE - Samsung 32GB DDR4-3200 RDIMM 2RX8

Proven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.

 

Specification:

 

Power
Memory voltage	1.2 V
Memory
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 32 GB
Internal memory	32 GB
Component for	PC/server
Memory form factor	288-pin DIMM
CAS latency	15
Memory voltage	1.2 V
Module configuration	4096M x 72
Row cycle time	15 ns
Refresh row cycle time	15 ns
ECC	Yes
Memory clock speed	2133 MHz
Internal memory type	DDR4
Features
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 32 GB
Internal memory	32 GB
Component for	PC/server
Memory form factor	288-pin DIMM
CAS latency	15
Memory voltage	1.2 V
Module configuration	4096M x 72
Row cycle time	15 ns
Refresh row cycle time	15 ns
ECC	Yes
Memory clock speed	2133 MHz
Internal memory type	DDR4
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Technical details
Sustainability certificates	RoHS
Doesn't contain	Halogen
Weight & dimensions
Width	5.25" (133.3 mm)
Depth	0.154" (3.9 mm)
Height	1.23" (31.2 mm)